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PhD in Packaging of GaN Devices

University of Nottingham

Qualification Type: PhD
Location: Nottingham
Funding for: UK Students
Funding amount: £24,237 stipend, per annum (tax-free).
Hours: Full Time
Placed On: 5th July 2024
Closes: 30th October 2024
Reference: ENG197

The UK aims to cut carbon emissions by at least 68% from the 1990 level by the end of 2030. New cars and vans solely powered by diesel and petrol will be banned for sale from 2030. Electric vehicles will take the leading role in achieving this emission target as the latest models provide a number of advantages including superior driver comfort and lower emissions. However, there are a number of technical challenges which still impede their widespread adoption such as the cost, range anxiety and charging infrastructure.

Power electronics is a critical technology for many low-carbon energy systems such as renewable power generation and electric vehicles. Wide bandgap (WBG) semiconductor devices are thought to be the main enabler for the next generation power electronics. However, the adverse effects of parasitic components associated with the device packaging, circuit and system layouts, and the uncontrollability of device inherent characteristics are limiting the use of wide-bandgap (WBG) devices in high-performance power electronics converters. This research will investigate the challenges of WBG semiconductor devices’ electrical and thermal modelling, packaging and electro-thermal optimisation issues. The work will be based in our dedicated packaging laboratories at the Power Electronics and Machine Centre (PEMC) of the University of Nottingham.

PEMC has state-of-the-art experimental facilities for power electronics and electrical drives and is renowned for its ability to conduct pure and applied research at realistic power levels (up to 2MW continuous). The successful candidate will be entitled to full award (stipend at the UKRI rate plus £5000 GBP enhancement and full tuition fees). The stipend for the successful candidate will be £24,237 per annum (tax-free). 

Candidate requirements:  

The successful candidate is expected to be highly motivated and must hold/achieve a minimum of a bachelor’s degree (or international equivalent) in Electrical or Electronic Engineering or a related discipline with excellent knowledge of Power Electronics Converters. It is desirable that the candidate has good knowledge of circuit design software (SPICE, PCB layout etc.) and some programming skills (MATLAB, Simulink, C etc.).

Please contact Dr Rishad Ahmed for further information. Email: Rishad.Ahmed@Nottingham.ac.uk

Please apply by clicking the 'Apply' button, above.

When applying for this studentship, please include the reference number (beginning ENGxxx and Dr Rishad Ahmed) within the personal statement of the application. This will help in ensuring your application is sent directly to the academic advertising the studentship.

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