Research Associate in RF Power Amplifiers for 5G

This EPSRC-NSF funded project is a collaboration between the Universities of Bristol, Notre Dame and Sheffield. It aims to investigate proof-of-concept techniques for the design of contiguous mode power amplifiers with high linearity and efficiency suitable at up to 40 GHz and above. The work at Sheffield is to focus on extraction of large signal models at up to second harmonic frequency and design harmonic terminations for broadband amplifiers.

This role requires expertise in RF Power Amplifier/MMIC design, modelling using ADS/EM simulations, large signal modelling, high frequency characterisation and parasitic network extraction, prototyping including layout and testing, including the reliability at the amplifier level. The Research Associate will be expected to travel to partner organisations as necessary.  They will be required to be involved in other projects involving design/ communications in the team and publish in top quality journals, consistent with the quality and ambition of the department. 

This project is located in the Departments of Electronic and Electrical Engineering. The Department is organised into three research areas: Semiconductor Materials and Devices, Communications, and Electrical Machines and Drives. The Communications activities have highly specialist strengths in cellular mobile wireless technologies and systems, antennas, RF Power amplifiers, FSS, smart/reconfigurable electromagnetic materials, physical layer design, RF circuit and system design, radio resource management, wireless network planning and the development of innovative RF measurement and diagnostic techniques.  The facilities include two anechoic chambers and a newly established mm-wave test facility that contains a Keysight 4 port VNA (N5245B – 10MHz to 50GHz, NSI-MI Antenna Measurement System (700S-360) and an MPI TS150-THz wafer probe station and thermal chuck.

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